Saturation Gain Characteristics of Quantum-Well Semiconductor Optical Amplifier

Authors

  • Alhuda A. Al-mfrji M. Sc, Department of Laser & Optoelectronics Engineering, Nahrian University, Baghdad, Iraq

Keywords:

Quantum-well semiconductor optical amplifier.

Abstract

Recently, there is an increasing interest onquantum well (QW) semiconductor optical amplifier in optical communications and optical signal processing applications. This paper addresses the dependence of saturation power on QW structure parameters. Expressions are given to assess this dependency and the results
indicate that the saturation power is a decreasing function of number of wells, well thickness, and amplifier length and it is almost independent of
barrier thickness.

Downloads

Download data is not yet available.

Downloads

Published

20-09-2011

Issue

Vol. 14 No. 2 (2011): Al-Nahrain University, College of Engineering Journal (NUCEJ)

Section

Articles

License

The authors retain the copyright of their manuscript by submitting the work to this journal, and all open access articles are distributed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International (CC-BY-NC 4.0), which permits use for any non-commercial purpose, distribution, and reproduction in any medium, provided that the original work is properly cited.

How to Cite

[1]
A. A. Al-mfrji, “Saturation Gain Characteristics of Quantum-Well Semiconductor Optical Amplifier”, NUCEJ, vol. 14, no. 2, pp. 205–212, Sep. 2011, Accessed: Dec. 23, 2024. [Online]. Available: https://oldjournal.eng.nahrainuniv.edu.iq/index.php/main/article/view/619